GaN HEMTs and Schottky Diodes 788 views Download Download IEEE.tv is made possible by the Members of IEEE. This feature is accessible to IEEE Members only, with an IEEE Account. If you are an IEEE Member please sign in to enable this feature. In addition to exclusive access to IEEE.tv programming, IEEE members have file download, and can save favorite videos with myTV. Discover all the benefits of IEEE membership! Belong to the world's largest technical proffecional society Join / Renew Today Share Embed Static Responsive <iframe src="//origin-dev.ieeetv.ieee.org/player/embed_play/128535/auto" allowfullscreen frameborder="0" scrolling="no" width="100%"></iframe> Size: x <iframe src="//origin-dev.ieeetv.ieee.org/player/embed_play/128535/auto" allowfullscreen frameborder="0" scrolling="no" width="760" height="430" ></iframe> Copy Close +0 MTT-S (IMS) 2-SID-3 Conference Highlights Series Create Account or Sign In to post comments #IMS #THz This presentation reviews recent progress of high-frequency GaN HEMT and Schottky diode technologies that enable GaN MMICs operating in sub-millimeter-waver frequency ranges while maintaining their superior breakdown performance. August 16, 2013
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